位置：首页 > IC中文资料第7135页 > SIHFBC30A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHFBC30A | iscN-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX) • Enhancement mode: Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | |
SIHFBC30A | N-Channel 650 V (D-S) MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | |
SIHFBC30A | Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
SiHFBC30A | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFETs FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to Ro | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：155.85 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：850.72 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：275.86 Kbytes Page：12 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
SIHFBC30A产品属性
- 类型
描述
- 型号
SIHFBC30A
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VIS |
23+ |
TO-220 |
10000 |
原装正品,假一罚十 |
|||
Vishay |
24+ |
NA |
3063 |
进口原装正品优势供应 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
D2PAK |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
20+ |
TO263 |
20 |
原装 |
|||
VISHAY/威世 |
2450+ |
TO263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VISHAY/威世 |
20+ |
TO-220 |
7500 |
现货很近!原厂很远!只做原装 |
|||
VB |
25+ |
T0-263 |
10000 |
原装现货假一罚十 |
SIHFBC30A规格书下载地址
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