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位置：首页 > IC中文资料第11287页 > SIHF9Z34

型号 功能描述 生产厂家&企业 LOGO 操作
SIHF9Z34

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

KERSEMI

SIHF9Z34-E3

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

KERSEMI

SIHF9Z34-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34L

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34L-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34S

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z34S, SiHF9Z34S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34S-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STL-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STR-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34_V01

Power MOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STRL-GE3A

Power MOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SIHF9Z34STRR-GE3A

Power MOSFET

文件：204.41 Kbytes Page：9 Pages

VishayVishay Siliconix

威世科技威世科技半导体

AUIRF9Z34N

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

IRF

AUIRF9Z34N

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

KERSEMI

F9Z34NS

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

IRF

GEF9Z34N

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes Page：10 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

IIRF9Z34N

P-Channel MOSFET Transistor

文件：335.54 Kbytes Page：2 Pages

ISC

无锡固电

SIHF9Z34产品属性

  • 类型

    描述

  • 型号

    SIHF9Z34

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

SIHF9Z34供应商更多...

更新时间：2025-8-17 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
SIHF9Z34
VISHAY/威世
24+
NA/
21000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
齐创科技(上海,北京,青岛)有限公司
SIHF9Z34
VIS
23+
TO-220
5000
原装正品,假一罚十
询价
深圳市创新迹电子有限公司
SIHF9Z34
VISHAY/威世
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
询价
深圳市达恩科技有限公司
SIHF9Z34STRL-GE3
Vishay
24+
NA
3000
进口原装正品优势供应
询价
中天科工半导体（深圳）有限公司
SIHF9Z34
VISHAY/威世通
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
询价
深圳市威雅利发展有限公司
SIHF9Z34S
VISHAY
21+
TO263
10020
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市河锋鑫科技有限公司
SiHF9Z34
VISHAY/威世
2022+
TO-220
36180
原厂代理 终端免费提供样品
询价
深圳市南科功率半导体有限公司
SIHF9Z34STRL-GE3
NK/南科功率
2025+
TO-263
986966
国产
询价
贸泽芯城（深圳）电子科技有限公司
SiHF9Z34STRR-GE3
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
深圳市威尔健半导体有限公司
SIHF9Z34
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
询价

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