Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν 175°C Operating Temperature ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Low RDS(ON) : 0.106 Ω (Typ.)

isc P-Channel MOSFET Transistor

文件：272.12 Kbytes Page：2 Pages

Advanced Power MOSFET

AUTOMOTIVE GRADE Advanced Planar Technology

Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power

Advanced Planar Technology

Features • Advanced Planar Technology • P-Channel MOSFET • Dynamic dV/dT Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified*

Advanced Process Technology

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Mini size of Discrete semiconductor elements

文件：468.13 Kbytes Page：10 Pages

P-Channel MOSFET Transistor

文件：335.54 Kbytes Page：2 Pages