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位置：首页 > IC中文资料第11656页 > SIHF9Z24S

型号 功能描述 生产厂家 企业 LOGO 操作
SIHF9Z24S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24S

Power MOSFET

FEATURES • Advanced process technology • Surface mount (IRF9Z24S, SiHF9Z24S) • 175 °C operating temperature • Fast switching • P-channel • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides in

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24S

Power MOSFET

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24S-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STL

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STL-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STR

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STR-E3

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer wit

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24S-GE3

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STRL-GE3A

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

SIHF9Z24STRR-GE3A

Power MOSFET

文件：207.54 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z24

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

VishayVishay Siliconix

威世威世科技公司

IRF9Z24

POWER MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

IRF

IRF9Z24

P-CHANNEL POWER MOSFETs

FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability

Samsung

三星

IRF9Z24

Power MOSFET

文件：277.52 Kbytes Page：9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF9Z24

isc N-Channel MOSFET Transistor

文件：280.77 Kbytes Page：2 Pages

ISC

无锡固电

SIHF9Z24S产品属性

  • 类型

    描述

  • 型号

    SIHF9Z24S

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

SIHF9Z24S供应商更多...

更新时间：2025-11-21 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
SiHF9Z30
VISHAY/威世通
20+
TO-220AB
36900
原装优势主营型号-可开原型号增税票
询价
深圳市威雅利发展有限公司
SiHF9Z24S
VBsemi
21+
TO263
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市河锋鑫科技有限公司
SiHF9Z24S
VISHAY/威世
2022+
TO-263
50000
原厂代理 终端免费提供样品
询价
深圳市南科功率半导体有限公司
SIHF9Z24STRR-GE3
NK/南科功率
2025+
TO-263
986966
国产
询价
深圳市得捷芯城科技有限公司
SiHF9Z30
VISHAY/威世
24+
NA/
22500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市博中泰实业有限公司
SiHF9Z24S
VBSEMI/台湾微碧
24+
D2PAK
60000
全新原装现货
询价
深圳市安富世纪电子有限公司
SiHF9Z24S
VBsemi
23+
TO263
50000
全新原装正品现货,支持订货
询价
深圳市中联芯电子有限公司
SiHF9Z24S
VBsemi
24+
TO263
11000
假一赔百原装正品价格优势实单可谈
询价
贸泽芯城（深圳）电子科技有限公司
SiHF9Z30
VISHAY/威世
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
深圳市威尔健半导体有限公司
SiHF9Z24S
VBSEMI/台湾微碧
23+
D2PAK
50000
全新原装正品现货,支持订货
询价

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