型号 功能描述 生产厂家 企业 LOGO 操作
SIHF9530

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

VISHAYVishay Siliconix

威世威世科技公司

SIHF9530

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.  The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipa

VISHAYVishay Siliconix

威世威世科技公司

Repetitive avalanche rated

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provid

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:198.36 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:198.36 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:198.36 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:198.36 Kbytes Page:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SAMSUNG

三星

9.5NS TRIPLE HIGH VOLTAGE VIDEO AMPLIFIER

DESCRIPTION The TDA9530 is a triple video amplifier with high voltage Bipolar/CMOS/DMOS technology (BCD). It can drive the 3 cathodes of a monitor CRT in DC or AC coupling mode. A DC coupling application is obtained by connecting a triple DC controlled cir cuit either on the input pin or on

STMICROELECTRONICS

意法半导体

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件:22.71 Kbytes Page:2 Pages

SEME-LAB

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件:22.71 Kbytes Page:2 Pages

SEME-LAB

SIHF9530产品属性

  • 类型

    描述

  • 型号

    SIHF9530

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Power MOSFET

更新时间:2026-3-14 17:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi/台湾微碧
22+
T0-263
20000
公司只做原装 品质保证
VISHAY
24+
TO220
18000
假一赔百原装正品价格优势实单可谈
VIS
23+
TO-220
10000
原装正品,假一罚十
VISHAY
25+
TO220
4077
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY/威世通
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY/威世
2022+
TO-220
2000
原厂代理 终端免费提供样品
VBSEMI/台湾微碧
24+
TO-220
60000
VISHAY/威世
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

SIHF9530数据表相关新闻