位置:首页 > IC中文资料第12454页 > SIHF840
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SIHF840 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
SIHF840 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | ||
SIHF840 | PowerMOSFET 文件:2.66616 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirement •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:287.12 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:234.01 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:234.01 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:234.01 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:234.01 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:234.01 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
EaseofParalleling 文件:176.79 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:231.4 Kbytes Page:10 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:198.2 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:198.2 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:198.2 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:198.2 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
8A500VN-channelEnhancementModePowerMOSFET 文件:1.63311 Mbytes Page:12 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | |||
9Amps竊?00VN-CHANNELMOSFET 文件:122.87 Kbytes Page:5 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | |||
8A竊?00VN-CHANNELMOSFET 文件:215.89 Kbytes Page:6 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | |||
8A500VN-CHANNELMOSFET 文件:242.9 Kbytes Page:7 Pages | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 |
SIHF840产品属性
- 类型
描述
- 型号
SIHF840
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VISHAY-威世 |
24+25+/26+27+ |
TO-263-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
Vishay |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
|||
Vishay Siliconix |
23+ |
D2PAK(TO-263) |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
VISHAY |
22+ |
TO-262 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
VISHAY |
27 |
TO-262 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
VISHAY |
27 |
TO-262 |
40 |
全新原装,支持实单,假一罚十,德创芯微 |
|||
Vishay |
2020+ |
TO-220 |
53560 |
公司代理品牌,原装现货超低价清仓! |
|||
VISHAY |
TO-262 |
90000 |
公司只做集团化配单-有更多数量-免费送样-原包装正品 |
||||
VISHAY(威世) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
SIHF840规格书下载地址
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2019-12-7
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