位置：首页 > IC中文资料第11292页 > SIHF740
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SIHF740 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 |   | |
SiHF740 | Power MOSFET 文件：276.83 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
SIHF740 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low gate charge Qg results in cimple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mod | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 650 V (D-S) MOSFET FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light | VBSEMI 微碧半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：286.48 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：238.34 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：199.04 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：199.04 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：199.04 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：199.04 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
740/741 High Displacement Threaded Diaphragm Seal FEATURES Large diaphragm provides ample displacement for inches of water ranges Ideal for high static, low differential pressure applications | ASHCROFT 雅斯科 | | ||
GROMMETS , BUSHINGS 文件：362.45 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Wiha Quality Tools Slotted Bits 文件：303.45 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO 文件：702.85 Kbytes Page：2 Pages | PENTAIR 滨特尔 | | ||
10A 400V N-channel Enhancement Mode Power MOSFET 文件：1.67134 Mbytes Page：12 Pages | WXDH 东海半导体 | |
SIHF740产品属性
- 类型
描述
- 型号
SIHF740
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY(威世) |
24+ |
T-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
VISHAY/威世 |
24+ |
NA/ |
24250 |
原厂直销,现货供应,账期支持! |
|||
VISHAY/威世 |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
Vishay |
24+ |
NA |
3384 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
TO-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
Vishay |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY/威世 |
24+ |
TO-220 |
60000 |
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