N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet

Power MOSFET

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Power MOSFET

文件：199.04 Kbytes Page：9 Pages

Power MOSFET

文件：199.04 Kbytes Page：9 Pages

Power MOSFET

文件：199.04 Kbytes Page：9 Pages

740/741 High Displacement Threaded Diaphragm Seal

FEATURES „ Large diaphragm provides ample displacement for inches of water ranges „ Ideal for high static, low differential pressure applications

GROMMETS , BUSHINGS

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Wiha Quality Tools Slotted Bits

文件：303.45 Kbytes Page：1 Pages

CONTROL B횁SICO Y ECON횙MICO DEL RELOJ FECHADOR ELECTR횙NICO

文件：702.85 Kbytes Page：2 Pages

10A 400V N-channel Enhancement Mode Power MOSFET

文件：1.67134 Mbytes Page：12 Pages