E Series Power MOSFET

FEATURES • A specific on resistance (m-cm2) reduction of 25 • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance

E Series Power MOSFET

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E Series Power MOSFET

E Series Power MOSFET

FEATURES • A specific on resistance (m-cm2) reduction of 25 • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance

EF Series Power MOSFET With Fast Body Diode

FEATURES • A specific on resistance (mΩ-cm2) reduction of 25 • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance

EF Series Power MOSFET With Fast Body Diode

600V N-Channel MOSFET

Description SuperFET™ is Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. Features • 650V @ TJ= 150°C •Typ.RDS(on) = 0.079Ω • Ultra low

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

35A 600V N-channel enhanced field effect transistor

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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