E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •

E Series Power MOSFET

2.0A, 800V NHANNEL POWER MOSFET

 DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab

Drain Current ID= 2.4A@ TC=25C

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2 Amps, 800 Volts N-CHANNEL POWER MOSFET

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2A, 800V N-CHANNEL POWER MOSFET

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N-CHANNEL POWER MOSFET

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