2N80晶体管资料
2N80别名：2N80三极管、2N80晶体管、2N80晶体三极管
2N80生产厂家：CBS
2N80制作材料：Ge-PNP
2N80性质：低频或音频放大 （LF）_开关管 （S）
2N80封装形式：直插封装
2N80极限工作电压：25V
2N80最大电流允许值：0.008A
2N80最大工作频率：<1MHZ或未知
2N80引脚数：3
2N80最大耗散功率：0.05W
2N80放大倍数：
2N80图片代号：C-37
2N80vtest：25
2N80htest：999900
- 2N80atest：0.008
2N80wtest：0.05
2N80代换 2N80用什么型号代替：AC122,AC125,AC126,AC151,ASY26,ASY27,2N1191,2N1192,2N1193,2N1194,3AX51D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N80 | 2A, 800V N-CHANNEL POWER MOSFET The UTC 2N80 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche a • RDS(on) = 6.3Ω @VGS = 10 V \n• High switching speed; | UTC 友顺 |   | |
2N80 | 2 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：170.28 Kbytes Page：6 Pages | UTC 友顺 | | |
2N80 | 2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | |
2N80 | Drain Current ID= 2.4A@ TC=25C 文件：68.07 Kbytes Page：2 Pages | ISC 无锡固电 | | |
丝印代码：2N80K5；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：2N80K5；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：2N80K5；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：2N80K5；N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi | STMICROELECTRONICS 意法半导体 | | ||
GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS | AMMSEMI | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2.0A, 800V NHANNEL POWER MOSFET DESCRIPTION The UTC 2N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 5.6 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capab | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET The UTC 2N80Z is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche • RDS(on) = 6.3Ω @VGS = 10 V \n• High switching speed; | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
NPN双极型晶体管 | YZJiangxin | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
2 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：170.28 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：170.28 Kbytes Page：6 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29147 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.29143 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
2 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：170.28 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
2 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：170.28 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.3754 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.68 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：263.34 Kbytes Page：7 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29132 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.72 Kbytes Page：6 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.72 Kbytes Page：6 Pages | UTC 友顺 | | ||
2A, 800V N-CHANNEL POWER MOSFET 文件：235.72 Kbytes Page：6 Pages | UTC 友顺 | | ||
Power MOSFET 文件：1.29134 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | FAIRCHILD 仙童半导体 | | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 5 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWI | STMICROELECTRONICS 意法半导体 | |
2N80产品属性
- 类型
描述
- Vdss(V)：
800
- Vgss(V)：
30
- Id(A)：
2
- Package：
TO-220TO-220FTO-...
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-220F |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VOLSEN |
SOT23 |
53650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
UTC/友顺 |
2022+ |
TO-252 |
8000 |
只做原装支持实单,有单必成。 |
|||
VOLSEN |
2450+ |
SOT23 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
JFS/FSC |
26+ |
TO-25125222092220F12 |
43600 |
全新原装现货,假一赔十 |
|||
UTC/友顺 |
25+ |
TO252 |
55000 |
UTC/友顺2N80L-TN3-R即刻询购立享优惠#长期有货 |
|||
ST |
25+ |
TO-220F |
20000 |
原装，请咨询 |
|||
UTC/友顺 |
23+ |
TO-252 |
79999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
|||
26+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
2N80规格书下载地址
2N80参数引脚图相关
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- 2N834
- 2N829
- 2N828A
- 2N818
- 2N817
- 2N816
- 2N815
- 2N814
- 2N813
- 2N812
- 2N811
- 2N810
- 2N81
- 2N80Z
- 2N80K5
- 2N809
- 2N808
- 2N807
- 2N806
- 2N805
- 2N804
- 2N803
- 2N802
- 2N801
- 2N800
- 2N80_15
- 2N80_12
- 2N7IO2
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- 2N7I07A
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- 2N797
- 2N796
- 2N795
- 2N794
- 2N793
- 2N792
- 2N791
- 2N790
- 2N79
- 2N789
- 2N785
- 2N784A
- 2N784(A)
- 2N784
- 2N783
- 2N782
- 2N781
- 2N780
- 2N78(A)
- 2N78
- 2N760A
- 2N753
- 2N7524
- 2N7522
- 2N7519
- 2N744A
- 2N743A
- 2N740
- 2N7373
- 2N7372
- 2N7371
- 2N7370
- 2N7369
2N80数据表相关新闻
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2025-7-182P4M(27)-AZ 是一种可控硅类型
2P4M(27)-AZ 原装正品 现货供应
2024-3-272N80L-TO220F1T-TG_UTC代理商
2N80L-TO220F1T-TG_UTC代理商
2023-3-162N7002ZDWG-SOT363L-TEG
2N7002ZDWG-SOT363L-TEG
2023-1-92nm芯片马上就来！台积电新工厂计划2024年底投产
2nm芯片来临！！！
2022-6-102N7002公司原装现货
瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2019-11-8
DdatasheetPDF页码索引
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