E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance please see

E Series Power MOSFET

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance please see

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance please see

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Integrated Zener diode ESD protection • Material categorization: for definitions of compliance please see

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive

11A, 812V N-CHANNEL POWER MOSFET

文件：165.26 Kbytes Page：4 Pages

800V N-Channel MOSFET

文件：266.71 Kbytes Page：10 Pages