600V trench & field stop technology

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IGBT裸片(400V-1200V)

IGBT3 Chip

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封装/外壳：模具 包装：散装 描述：IGBT 3 CHIP 600V 分立半导体产品 晶体管 - UGBT、MOSFET - 单

TRENCHSTOPTM IGBT3 Chip

Features:  600V trench & field stop technology  Low VCEsat  Low turn-off losses  Short tail current  Positive temperature coefficient  Easy paralleling

Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Features: • Very low VCE(sat) 1.5V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time 5s • TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high

600V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE（sat）

Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

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