TRENCHSTOPTMIGBT3Chip

Features: 600Vtrench&fieldstoptechnology LowVCEsat Lowturn-offlosses Shorttailcurrent Positivetemperaturecoefficient Easyparalleling

IGBT3Chip

文件：76.79 Kbytes Page：4 Pages

LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

Features: •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime5s •TRENCHSTOP™andFieldstoptechnologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhigh

600V,15A,TrenchFSIIFastIGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering ⚫VerylowVCE（sat）

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

文件：688.45 Kbytes Page：12 Pages