IGBT3Chip

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TRENCHSTOPTMIGBT3Chip

Features: 600Vtrench&fieldstoptechnology LowVCEsat Lowturn-offlosses Shorttailcurrent Positivetemperaturecoefficient Easyparalleling

IGBT3Chip600VTrench&FieldStoptechnologypositivetemperaturecoefficient

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600Vtrench&fieldstoptechnology

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封装/外壳：模具 包装：散装 描述：IGBT 3 CHIP 600V 分立半导体产品 晶体管 - UGBT、MOSFET - 单

HighSpeedIGBTChipinNPT-technologypositivetemperaturecoefficient

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LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithsoft,fastrecoveryanti-parallelEmConHEdiode

Features: •VerylowVCE(sat)1.5V(typ.) •MaximumJunctionTemperature175°C •Shortcircuitwithstandtime5s •TRENCHSTOP™andFieldstoptechnologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhigh

600V,15A,TrenchFSIIFastIGBT

GeneralDescription: UsingNCE'sproprietarytrenchdesignandadvancedFS(FieldStop)second generationtechnology,the600VTrenchFSIIIGBTofferssuperiorconductionand switchingperformances,andeasyparalleloperation; Features TrenchFSIITechnologyoffering ⚫VerylowVCE（sat）

LowLossIGBT:IGBTinTRENCHSTOP??andFieldstoptechnology

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