Single N-Channel MOSFET

General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Low on-state resistance ■ Fast switching ■ TrenchMOS™ technology. Applications ■ DC to DC convertors ■ DC motor control ■ Lithium-ion battery applications ■ Note

N-Channel 30-V (D-S) MOSFET

FEATURES ● TrenchFET Power MOSFET

R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in A Simple Method of Generating Thermal Models for a Power MOSFET[1]. When implemented in P-Spice, these values have matching characteristic curves to the S

N-Channel 30-V (D-S) MOSFET

FEATURES ● TrenchFET Power MOSFET

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

Single N-Channel MOSFET

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

文件：235.57 Kbytes Page：2 Pages

Networks

文件：63.6 Kbytes Page：1 Pages

Networks

文件：29.03 Kbytes Page：2 Pages

Lower Gate Charge, Simple Drive Requirement

文件：65.379 Kbytes Page：4 Pages