R-C Thermal Model Parameters

DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in A Simple Method of Generating Thermal Models for a Power MOSFET[1]. When implemented in P-Spice, these values have matching characteristic curves to the S

N-Channel Enhancement Mode MOSFET

Features • 30V/4A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

Thick Film Surface Mounted Wide Body Tape and reel packaging standard

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Networks

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Networks

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Lower Gate Charge, Simple Drive Requirement

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