N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

FEATURES ● TrenchFET Power MOSFET ● LITTLE FOOT Plus™ Integrated Schottky ● PWM Optimized APPLICATIONS ● Low Power Sychronous Rectification

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode

FEATURES ● TrenchFET Power MOSFET ● LITTLE FOOT Plus™ Integrated Schottky ● PWM Optimized APPLICATIONS ● Low Power Sychronous Rectification

Dual-Band Monolithic Power Amplifier System

文件：120.84 Kbytes Page：2 Pages

N-Channel Reduced Qg, Fast Switching MOSFET with Schottky

封装/外壳：20-LFLGA 包装：散装 描述：IC RF AMP 900MHZ 1.8GHZ 20LGA RF/IF，射频/中频和 RFID 射频放大器

Tri-Band Monolithic Power Amplifier System

文件：123.1 Kbytes Page：2 Pages

封装/外壳：20-LFLGA 包装：散装 描述：IC RF AMP 900MHZ 1.8GHZ 20LGA RF/IF，射频/中频和 RFID 射频放大器

N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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