N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • 30V,2.5A, RDS(ON)=65 mΩ @ VGS=10V 30V,2.0A,

N-Channel Enhancement Mode Field Effect Transistor

文件：303.22 Kbytes Page：4 Pages

Small Signal MOSFETS

丝印代码：A04；N-Channel 30-V (D-S) MOSFET

Features VDS (V) = 30V RDS(ON)

丝印代码：A04；N-Channel 30-V (D-S) MOSFET

Features VDS (V) = 30V RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel Enhancement MOSFET

■ Features ● VDS (V) = 30V ● RDS(ON)

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Subminiature surface mount package. 3. Applications n Battery managemen

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

N-Channel Enhancement MOSFET

■ Features ● VDS (V) = 30V ● RDS(ON)

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● RDS(ON)

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel Enhancement Mode Field Effect Transistor

文件：303.22 Kbytes Page：4 Pages

N-Channel 30-V (D-S) MOSFET

文件：113.34 Kbytes Page：5 Pages

N-Channel 30 V (D-S) MOSFET

文件：158.83 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：113.34 Kbytes Page：5 Pages

N-Channel 30 V (D-S) MOSFET

文件：158.83 Kbytes Page：7 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.16 Kbytes Page：9 Pages

N-Channel 30-V (D-S) MOSFET

丝印代码：P4***；N-Channel 30-V (D-S) MOSFET

文件：239.36 Kbytes Page：10 Pages

丝印代码：P4***；N-Channel 30-V (D-S) MOSFET

文件：242.33 Kbytes Page：10 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.16 Kbytes Page：9 Pages

N-Channel 30 V (D-S) MOSFET

文件：206.16 Kbytes Page：9 Pages

30-V (D-S), Single

N-Channel 30-V (D-S) MOSFET

文件：75.51 Kbytes Page：5 Pages

N-Channel MOSFET

文件：1.54837 Mbytes Page：4 Pages

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb