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位置：首页 > IC中文资料第248页 > SI2302

SI2302价格

参考价格：￥0.3640

型号：SI2302ADS-T1-E3 品牌：VISHAY 备注：这里有SI2302多少钱，2025年最近7天走势，今日出价，今日竞价，SI2302批发/采购报价，SI2302行情走势销售排行榜，SI2302报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SI2302

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: S2 • Epo

MCC

美微科

SI2302

20 V N-Channel Enhancement Mode MOSFET

VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A

HTSEMI

金誉半导体

SI2302

Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

CHENDA

辰达半导体

SI2302

N- CHANNEL MOSFET in a SOT-23 Plastic Package

DESCRIPTIONS N- CHANNEL MOSFET in a SOT-23 Plastic Package. FEATURES Super high dense cell design for low RDS(ON),SOT-23 package. APPLICATIONS Battery management,High speed switch,low power DC to DC converter.

FOSHAN

蓝箭电子

SI2302

N-Channel Enhancement Mode MOSFET

Feature ● 16V/3.6A, RDS(ON) = 100mΩ(MAX) @VGS = 4.5V. RDS(ON) = 140mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management Portable Equipment a

ZPSEMIZP Semiconductor

至尚臻品

SI2302

N-Channel Enhancement MOSFET

N-Channel Enhancement MOSFET ■ FEATURES TrenchFET Power MOSFET

YIXIN

壹芯微

SI2302

Plastic-Encapsulate Mosfets

FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic.

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

SI2302

Plastic-Encapsulate MOSFETS

文件：1.16669 Mbytes Page：6 Pages

CHENDA

辰达半导体

SI2302

N-Channel Enhancement Mode Field Effect Transistor

文件：266.42 Kbytes Page：5 Pages

MCC

美微科

SI2302A

N-Channel Enhancement Mode Field Effect Transistor

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request by Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix

MCC

美微科

SI2302A

N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

SI2302A

N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

EVVOSEMI

翊欧

SI2302ADS

20V N-Channel MOSFET

Application « Load/Power switch | + Interfacing, logic switching | «Battery management for ultra protable electronics

TECHPUBLIC

台舟电子

SI2302ADS

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

SI2302ADS

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

SI2302ADS-T1

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

SI2302ADS-T1-E3

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

SI2302B

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

EVVOSEMI

翊欧

SI2302B

SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

SI2302CDS

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS-T1-E3

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS-T1-GE3

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Devices • DC/DC Converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS_V02

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DS

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applic

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SI2302DS

N-Channel Enhancement MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

KEXIN

科信电子

SI2302DS

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

Philips

飞利浦

SI2302DS-HF

N-Channel MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

KEXIN

科信电子

SI2302DS-T1-GE3

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

VBSEMI

微碧半导体

SI2302DS-T1-GE3

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

VBSEMI

微碧半导体

SI2302DS-T1-GE3_V01

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

VBSEMI

微碧半导体

SI2302-TP

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: S2 • Epo

MCC

美微科

SI2302_11

N-Channel Enhancement Mode Field Effect Transistor

文件：266.42 Kbytes Page：5 Pages

MCC

美微科

SI2302_13

N-Channel Enhancement Mode Field Effect Transistor

文件：234.42 Kbytes Page：5 Pages

MCC

美微科

SI2302_V01

Plastic-Encapsulate MOSFETS

文件：1.16669 Mbytes Page：6 Pages

CHENDA

辰达半导体

SI2302ADS-T1-GE3

N-Channel 20 V (D-S) MOSFET

文件：1.048069 Mbytes Page：9 Pages

VBSEMI

微碧半导体

SI2302CDS

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS

N-Channel 20 V (D-S) MOSFET

文件：215.14 Kbytes Page：8 Pages

TFUNK

威世

SI2302CDS_V01

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS-T1-E3

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS-T1-GE3

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302CDS-T1-GE3

N-Channel 20 V (D-S) MOSFET

文件：1.04802 Mbytes Page：9 Pages

VBSEMI

微碧半导体

SI2302DDS

N-Channel 20 V (D-S) MOSFET

文件：209.68 Kbytes Page：8 Pages

TFUNK

威世

SI2302DDS

N-Channel 20 V (D-S) MOSFET

文件：200.62 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS_V01

N-Channel 20 V (D-S) MOSFET

文件：200.62 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DDS-T1-GE3

N-Channel 20 V (D-S) MOSFET

文件：200.62 Kbytes Page：8 Pages

VishayVishay Siliconix

威世科技威世科技半导体

SI2302DS-3

N-Channel Enhancement MOSFET

文件：1.49857 Mbytes Page：4 Pages

KEXIN

科信电子

SI2302DS-HF-3

N-Channel MOSFET

文件：1.15885 Mbytes Page：4 Pages

KEXIN

科信电子

2302

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

ETCList of Unclassifed Manufacturers

未分类制造商

2302

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

文件：78.97 Kbytes Page：2 Pages

GHZTECH

2302

P-CHANNEL MOSFET N-CHANNEL MOSFET

文件：110.94 Kbytes Page：4 Pages

KIA

可易亚半导体

2302

20V N-Channel Enhancement MOS FET

文件：310.86 Kbytes Page：2 Pages

FUMAN

富满微

2302

Nylon Hose Clamps

文件：116.22 Kbytes Page：1 Pages

HeycoHeyco.

海科

SI2302产品属性

  • 类型

    描述

  • 型号

    SI2302

  • 功能描述

    MOSFET 20V 3A

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

SI2302供应商更多...

更新时间：2025-8-6 19:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
SI2302DDS-T1-GE3
VISHAY/威世
25+
SOT-23
47705
VISHAY/威世全新特价SI2302DDS-T1-GE3即刻询购立享优惠#长期有货
询价
深圳市恒佳微电子有限公司
SI2302-SOT23
HB
21+
10560
十年专营,原装现货,假一赔十
询价
深圳市振宏微科技有限公司
SI2302
CJ
23+
SOT23
600000
原装正品!假一罚十!
询价
深圳市澳亿芯电子科技有限公司
SI2302A2SHB
CJ
24+
SOT23-3
12000
原装正品 假一罚十
询价
深圳兆威电子有限公司
SI2302CDS-T1-GE3
VISHAY/威世通
23+
SOT-23
7130
只做原装全系列供应价格优势
询价
深圳市汇莱威科技有限公司
SI2302DS-T1-GE3
VISHAY/威世
24+
SOT-23
502018
免费送样原盒原包现货一手渠道联系
询价
深圳市恒凯威科技开发有限公司
SI2302CDS-T1-GE3
VISHAY/威世
21+
SOT23-3
8080
只做原装,质量保证
询价
深圳市明嘉莱科技有限公司
SI2302DDS-T1-GE3
VISHAY SEMICONDUCTOR
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市近平电子有限公司
SI2302DS
VISHAY
12+
SOT-23
6000
原装正品现货
询价
深圳市讯顺达科技有限公司
SI2302CDS-T1-GE3
VISHAY
21+
SOT-23
120000
全新原装公司现货
询价

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SI2302规格书下载地址

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