N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: S2 • Epo

20 V N-Channel Enhancement Mode MOSFET

VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A

N-Channel Enhancement MOSFET

N-Channel Enhancement MOSFET ■ FEATURES TrenchFET Power MOSFET

Plastic-Encapsulate Mosfets

FEATURES • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Case Material: Molded Plastic.

丝印代码：A2SHB；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

N- CHANNEL MOSFET in a SOT-23 Plastic Package

DESCRIPTIONS N- CHANNEL MOSFET in a SOT-23 Plastic Package. FEATURES Super high dense cell design for low RDS(ON),SOT-23 package. APPLICATIONS Battery management,High speed switch,low power DC to DC converter.

N-Channel Enhancement Mode MOSFET

Feature ● 16V/3.6A, RDS(ON) = 100mΩ(MAX) @VGS = 4.5V. RDS(ON) = 140mΩ(MAX) @VGS = 2.5V. ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management Portable Equipment a

Plastic-Encapsulate MOSFETS

文件：1.16669 Mbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：266.42 Kbytes Page：5 Pages

Small Signal MOSFETS

丝印代码：A02；N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

丝印代码：A02；N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

N-Channel Enhancement Mode Field Effect Transistor

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request by Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix

丝印代码：2A***；N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

丝印代码：2A***；N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

丝印代码：2302；20V N-Channel MOSFET

Application « Load/Power switch | + Interfacing, logic switching | «Battery management for ultra protable electronics

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

丝印代码：A2SHB；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

丝印代码：A2SHB；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

丝印代码：N2***；N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

N-Channel 20-V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Material categorization:    for definitions of compliance please see    www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Devices • DC/DC Converter

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switching for portable devices • DC/DC converter

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applic

N-Channel Enhancement MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

N-Channel MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: S2 • Epo

N-Channel Enhancement Mode Field Effect Transistor

文件：266.42 Kbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：234.42 Kbytes Page：5 Pages

Plastic-Encapsulate MOSFETS

文件：1.16669 Mbytes Page：6 Pages

N-Channel 2.5 V (G-S) MOSFET

N-Channel 20 V (D-S) MOSFET

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MOSFET场效应管

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

N-Channel 20 V (D-S) MOSFET

文件：187.31 Kbytes Page：8 Pages

N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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N-Channel 20 V (D-S) MOSFET

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N-Channel Enhancement MOSFET

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N-Channel MOSFET

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8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys