N-Channel Enhancement Mode Field Effect Transistor

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request by Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix

丝印代码：A02；N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

丝印代码：A02；N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

Small Signal MOSFETS

丝印代码：2302；20V N-Channel MOSFET

Application « Load/Power switch | + Interfacing, logic switching | «Battery management for ultra protable electronics

丝印代码：2A***；N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

丝印代码：2A***；N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5 V (G-S) MOSFET

N-Channel 20 V (D-S) MOSFET

文件：1.048069 Mbytes Page：9 Pages

MOSFET场效应管

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys