N-Channel Enhancement Mode Field Effect Transistor

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request by Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix

N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

N-Channel Enhancement MOSFET

Features VDS=20V RDS(on)= 45mΩ@VGS=4.5V ,ID=3.6A RDS(on)= 60mΩ@VGS=2.5V ,ID=3.1A

Small Signal MOSFETS

20V N-Channel MOSFET

Application « Load/Power switch | + Interfacing, logic switching | «Battery management for ultra protable electronics

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 1.25-W, 2.5-V MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5-V (G-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

N-Channel 2.5 V (G-S) MOSFET

N-Channel 20 V (D-S) MOSFET

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2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

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20V N-Channel Enhancement MOS FET

文件：310.86 Kbytes Page：2 Pages

P-CHANNEL MOSFET N-CHANNEL MOSFET

文件：110.94 Kbytes Page：4 Pages

Nylon Hose Clamps

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