N-Channel Enhancement Mode Field Effect Transistor

Features • Halogen free available upon request by adding suffix -HF • 20V,3.0A, RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: S2 • Epo

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2302 is a COMMON BASE transistor capable of providing 2 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

2.0 Watt - 20 Volts, Class C Microwave 2300 MHz

文件：78.97 Kbytes Page：2 Pages

P-CHANNEL MOSFET N-CHANNEL MOSFET

文件：110.94 Kbytes Page：4 Pages

20V N-Channel Enhancement MOS FET

文件：310.86 Kbytes Page：2 Pages

Nylon Hose Clamps

文件：116.22 Kbytes Page：1 Pages