N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI2302DS in SOT23. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.

N-Channel Enhancement MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applic

N-channel enhancement mode field-effect transistor

N-channel TrenchMOS logic level FET

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

N-Ch Fast Switching MOSFETs SOT-23/20V/3.1A

N-Channel MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

N-Channel Enhancement MOSFET

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N-Channel MOSFET

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8-bit 50MSPS Video A/D Converter with Clamp Function

Description The CXD2302Q is an 8-bit CMOS A/D converter for video with synchronizing clamp function. The adoption of 2 step-parallel method achieves low power consumption and a maximum conversion rate of 50MSPS. Features • Resolution: 8 bit ± 1/2LSB (DL) • Maximum sampling frequency: 50MSPS •

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys

BROADBAND LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2302 is a broadband linear variable gain amplifier that was designed specifically for digital communications systems that require linear amplification over a wide gain control range. It is suitable for use in CDMA or TDMA systems in the cellular or PCS band, in DAMPS sys