Silicon RF Pulse Power Transistor(Continued)

HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC= 10A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC

Short Circuit Rated IGBT

General Description Fairchild’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, Uninterrupted Power Supplies (UPS) and general inverters w

Primary-side-control PWM Controller

文件：497.07 Kbytes Page：14 Pages

100V N-Channel MOSFET

Primary-side-control PWM Controller

文件：497.07 Kbytes Page：14 Pages

Silicon RF Pulse Power Transistor(Continued)

Fast S-IGBT in NPT-technology

文件：506.86 Kbytes Page：12 Pages

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：353.85 Kbytes Page：12 Pages

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：353.85 Kbytes Page：12 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A 92W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated IGBT

文件：541.72 Kbytes Page：7 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 16A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单