HighSpeed 2-Technology

• Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Ga

Fast S-IGBT in NPT-technology

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Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.4V@IC= 10A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Short Circuit Rated IGBT

General Description Fairchild’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, Uninterrupted Power Supplies (UPS) and general inverters w

IGBT，600V，10A，短路额定

飞兆半导体的 RUFD 绝缘栅极双极性晶体管 (IGBT) 系列提供低导通和开关损耗，以及短路耐用性。RUFD 系列专为电机控制、UPS 和一般逆变器等短路耐用性是必需功能的应用而设计。 •10A, 600V, TC = 100°C\n•低饱和电压：VCE(sat) = 2.1V @ IC = 10A\n•典型下降时间。. . . . . . . . TJ = 125°C时为0.242ns\n•高速开关\n•高输入阻抗\n•短路额定值;

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：353.85 Kbytes Page：12 Pages

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：353.85 Kbytes Page：12 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A 92W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated IGBT

Short Circuit Rated IGBT

文件：541.72 Kbytes Page：7 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 16A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Short Circuit Rated IGBT

General Description Fairchilds RUF series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUF series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters wher

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT

N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) ■ VERY LOW ON-VOLTAGE DROP (Vcesat) ■ LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) ■ HIGH CURRENT CAPABILITY ■ OFF LOSSES INCLUDE TAIL CURRENT APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAY

Short Circuit Rated IGBT

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