8.0 AMPS. Glass Passivated Super Fast Rectifiers

文件：87.1 Kbytes Page：2 Pages

8.0 AMPS. Surface Mount Super Fast Rectifiers

文件：167.08 Kbytes Page：2 Pages

8.0 AMPS. Surface Mount Super Fast Rectifiers

文件：662.86 Kbytes Page：2 Pages

8.0AMPS Surface Mount Super Fast Rectifiers

文件：174.81 Kbytes Page：2 Pages

Surface Mount Super Fast Rectifiers

文件：385.19 Kbytes Page：4 Pages

35ns, 8A, 500V, Super Fast Recovery Rectifier

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE GEN PURP 500V 8A TO263AB 分立半导体产品 二极管 - 整流器 - 单

35ns, 8A, 500V, Super Fast Recovery Rectifier

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE GEN PURP 500V 8A TO263AB 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)