SUPERFAST RECOVERY RECTIFIER

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VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes

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8.0AMP. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

8.0 AMPS. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

SUPERFAST RECOVERY RECTIFIER

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VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes

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35ns, 8A, 500V, Super Fast Recovery Rectifier

8.0 AMPS. Glass Passivated Super Fast Rectifiers

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8.0AMPS. Glass Passivated Super Fast Rectifiers

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封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 500V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 500V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)