SUPER FAST RECTIFIERS

Feaures Glass passivated chip junctions High Forward Surge Capability Super fast recovery time for switching mode application Lead free in compliance with EU RoHS 2011/65/EU directive Low Reverse Current

SUPER FAST RECTIFIERS

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Super Fast Recovery Rectifiers

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SUPER FAST RECTIFIERS

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SUPERFAST RECOVERY RECTIFIER

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SUPER FAST RECTIFIERS

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VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes

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Super-Fast Recovery Rectifiers

8A super fast recovery diode

FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package has Underwriters Laboratories Flammability Classification 94V-O utilizing Flame Retardant Epoxy Moldi

8.0 AMPS. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

8.0AMP. Glass Passivated Super Fast Rectifiers

Features ◇ High efficiency, low VF ◇ High current capability ◇ High reliability ◇ High surge current capability ◇ Low power loss. ◇ For use in low voltage, high frequency inventor, free wheeling, and polarity protection application

声表面波滤波器

超快恢复二极管

丝印代码：D-PAK；Superfast Recovery Rectitiers

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Surface Mount Superfast Recovery Rectifier

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SUPER FAST RECTIFIERS

文件：339.29 Kbytes Page：3 Pages

SUPERFAST RECOVERY RECTIFIER

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VOLTAGE RANGE 50 to 600 Volts 8.0 Amperes

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8.0 AMPS. Glass Passivated Super Fast Rectifiers

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8.0AMPS. Glass Passivated Super Fast Rectifiers

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封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 100V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：管件 描述：DIODE GEN PURP 100V 8A TO220AB 分立半导体产品 二极管 - 整流器 - 单

丝印代码：I-PAK；Superfast Recovery Rectitiers

文件：2.6959 Mbytes Page：3 Pages

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat