RF POWER TRANSISTORS The LdmoSTFAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

60W 28V HF to 1GHz LDMOS TRANSISTOR

• Excellent thermal stability\n• POUT = 60W with 13dB gain @ 945MHz\n• Common source configuration• In compliance with the 2002/95/EC european directive\n• BeO free package;

封装/外壳：M243 包装：卷带（TR） 描述：FET RF 65V 945MHZ M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoSTFAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs DESCRIPTION The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain

60W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package

• Excellent thermal stability\n• POUT = 60W with 13dB gain @ 945MHz\n• Common source configuration• In compliance with the 2002/95/EC european directive\n• BeO free package;

封装/外壳：M243 包装：托盘 描述：FET RF 65V 945MHZ M243 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoSTFAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2