RF POWER TRANSISTORS The LdmoSTFAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF POWER TRANSISTORS The LdmoSTFAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs DESCRIPTION The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain

Magnets and Actuators

Description Littelfuse offers a wide range of magnetic actuators that are packaged in shapes similar to the relative mating sensors. We also offer a limited family of bare magnets with various grades of materials, including ferrite (ceramic), AlNiCo and neodymium iron boron (NdFeB) materials.

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

200V, N-CHANNEL

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