FAST RECOVERY DIODES Hockey Puk Version

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Fast Recovery Diodes (Hockey PUK Version), 560 A

FEATURES • High power FAST recovery diode series • 6.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 560 A

FEATURES • High power FAST recovery diode series • 6.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 560 A

FEATURES • High power FAST recovery diode series • 6.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 560 A

FEATURES • High power FAST recovery diode series • 6.0 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 560 A

文件：216.53 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 560 A

Fast Recovery Diodes (Hockey PUK Version), 560 A

文件：216.53 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 560 A

文件：216.53 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 560 A

文件：216.53 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 560 A

文件：216.53 Kbytes Page：9 Pages

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ)

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Two Channel Direct Drive Speech Controller?

INTRODUCTION SNC553 is a two-channel voice synthesizer IC with PWM direct drive circuit. It built-in a 4-bit tiny controller with one 4-bit input port and two 4-bit I/O ports. By programming through the tiny controller in SNC553, user’s varied applications including voice section combination, key

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.