型号 功能描述 生产厂家 企业 LOGO 操作

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

封装/外壳:B-8 包装:管件 描述:DIODE GEN PURP 1.6KV 400A B8 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:B-8 包装:管件 描述:DIODE GEN PURP 1.6KV 450A B8 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

SD453N16产品属性

  • 类型

    描述

  • 型号

    SD453N16

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    FAST RECOVERY DIODES

更新时间:2025-11-1 8:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
MODULE
2100
公司大量全新现货 随时可以发货
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
23+
MODULE
8000
只做原装现货
Vishay General Semiconductor -
25+
B-8
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单
IR
23+
SCR
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY
25+
B-8
26
就找我吧!--邀您体验愉快问购元件!

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