型号 功能描述 生产厂家&企业 LOGO 操作
SD453N

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
SD453N

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0μsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),400/450A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0μsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

封装/外壳:B-8 包装:管件 描述:DIODE GEN PURP 1.6KV 400A B8 分立半导体产品 二极管 - 整流器 - 单

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

封装/外壳:B-8 包装:管件 描述:DIODE GEN PURP 1.6KV 450A B8 分立半导体产品 二极管 - 整流器 - 单

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Low-Cost,Versatile,10/100kHzFrequencytoVoltageConverters

文件:1.47546 Mbytes Page:6 Pages

INTRONICS

Intronics Power, Inc.

INTRONICS

SD453N产品属性

  • 类型

    描述

  • 型号

    SD453N

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    FAST RECOVERY DIODES Stud Version

更新时间:2024-6-15 14:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
模块
256
原装 原装 原装 只做原装现货
IR
22+
6000
终端可免费供样,支持BOM配单
IR
MODULE
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
IR
23+
B-8
8000
只做原装现货
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
16+
MODULE
2100
公司大量全新现货 随时可以发货
VISHAY
20+
B-8
26
就找我吧!--邀您体验愉快问购元件!
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
Vishay General Semiconductor -
24+
B-8
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证

SD453N芯片相关品牌

  • BANNER
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  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

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