High-Speed Analo N-Channel DMOS FETs

DESCRIPTION The Calogic SD211 is a 30V analog switch driver with built-in protection diode from gate to substrate The SD211 is used with SD213 and SD215 DMOS analog switches. FEATURES • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB • Low On Resistance . . . . . . . . . .

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

DMOS High Speed Switches

N-Channel Lateral DMOS Switch - Zener Protected

Description: The SD211DE / SD213DE / SD215DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The family is normally used for ±5V analog switching or as a high speed driver of the SD214. These MOSFETs utilize lateral constr

N-Channel Lateral DMOS Switch - Zener Protected

Description: The SD211DE / SD213DE / SD215DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The family is normally used for ±5V analog switching or as a high speed driver of the SD214. These MOSFETs utilize lateral constr

High-Speed Analo N-Channel DMOS FETs

DESCRIPTION The Calogic SD211 is a 30V analog switch driver with built-in protection diode from gate to substrate The SD211 is used with SD213 and SD215 DMOS analog switches. FEATURES • High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB • Low On Resistance . . . . . . . . . .

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V an

DMOS Switches

N-Channel Lateral DMOS FETs

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Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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