Process 63 PNP Medium Power

• This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68.

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

SEMICONDUCTORS

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Low Level and General Purpose Amplifiers

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Amplifier Transistors

Trans GP BJT PNP 30V 0.1A 3-Pin TO-92 Box

TRANS PNP 30V 0.5A TO-92

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 30V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP General Purpose Amplifier

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Low Level and General Purpose Amplifiers

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丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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