型号 功能描述 生产厂家 企业 LOGO 操作

High-Speed Analog N-Channel Enhancement-Mode DMOS FETS

DESCRIPTION The SD200 series is manufactured utilizing Calogic’s proprietary DMOS design and processing techniques. The device is designed to operate well through 1 GHz while maintaining excellent frequency response, power gain, and low noise. The DMOS structure is an inherently low capacitance a

Calogic

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Super Fast Recovery Rectifier

Super Fast Recovery Rectifier VRRM = 100-600V, IF(AV) = 60Amp,TRR = 60nS

TEL

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 200 A

FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Super Fast Recovery Rectifier

Super Fast Recovery Rectifier VRRM = 100-600V, IF(AV) = 60Amp,TRR = 60nS

TEL

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Super Fast Recovery Rectifier

Super Fast Recovery Rectifier VRRM = 100-600V, IF(AV) = 60Amp,TRR = 60nS

TEL

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Super Fast Recovery Rectifier

Super Fast Recovery Rectifier VRRM = 100-600V, IF(AV) = 60Amp,TRR = 60nS

TEL

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Super Fast Recovery Rectifier

Super Fast Recovery Rectifier VRRM = 100-600V, IF(AV) = 60Amp,TRR = 60nS

TEL

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

SD203产品属性

  • 类型

    描述

  • 型号

    SD203

  • 制造商

    TRSYS

  • 制造商全称

    Transys Electronics

  • 功能描述

    Super Fast Recovery Rectifier

更新时间:2025-11-4 14:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
6000
终端可免费供样,支持BOM配单
IR
23+
SCR
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
IR
23+
8000
只做原装现货
IR
24+
MODULE
2100
公司大量全新现货 随时可以发货

SD203数据表相关新闻