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High-SpeedAnalogN-ChannelEnhancement-ModeDMOSFETS

DESCRIPTION TheSD200seriesismanufacturedutilizingCalogic’sproprietaryDMOSdesignandprocessingtechniques.Thedeviceisdesignedtooperatewellthrough1GHzwhilemaintainingexcellentfrequencyresponse,powergain,andlownoise.TheDMOSstructureisaninherentlylowcapacitancea

Calogic

Calogic, LLC

Calogic

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SD203产品属性

  • 类型

    描述

  • 型号

    SD203

  • 制造商

    TRSYS

  • 制造商全称

    Transys Electronics

  • 功能描述

    Super Fast Recovery Rectifier

更新时间:2024-6-21 15:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
16+
MODULE
2100
公司大量全新现货 随时可以发货
IR
23+
8000
只做原装现货
IR
22+
6000
终端可免费供样,支持BOM配单
IR
SCR
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样

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