型号 功能描述 生产厂家&企业 LOGO 操作
SD203N

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF
SD203N

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

FastRecoveryDiodes(StudVersion),200A

FEATURES •Highpowerfastrecoverydiodeseries •1.0to2.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

SuperFastRecoveryRectifier

SuperFastRecoveryRectifier VRRM=100-600V,IF(AV)=60Amp,TRR=60nS

TEL

TRANSYS Electronics Limited

TEL

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

FASTRECOVERYDIODESStudVersion

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRF

International Rectifier

IRF

SD203N产品属性

  • 类型

    描述

  • 型号

    SD203N

  • 制造商

    TRSYS

  • 制造商全称

    Transys Electronics

  • 功能描述

    Super Fast Recovery Rectifier

更新时间:2024-9-23 11:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
MODULE
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
IR
23+
MODULE
8000
只做原装现货
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
18+
MODULE
2050
公司大量全新原装 正品 随时可以发货
IR
22+
MODULE
6000
终端可免费供样,支持BOM配单
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
IR
23+
MODULE
7000
IR
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保

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  • Vishay

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