TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450 Watts peak pulse power per line(tp=8/20μs) Replacement for MLV (0805) Protects one power or I/O port Low clamping voltage Applied to the type 3V and 36V 61000-4-2 (ESD): Air 30kV, Contact 30kV

7/6th Gen Intel® CoreTM Mini-ITX

Features • 2 DDR4 SODIMM up to 32GB • Dual independent displays: VGA + HDMI 1.4 + DP++ • DP++ resolution up to 4096x2304 @ 60Hz HDMI 1.4: resolution support 4K@ 24Hz • Multiple expansion: 1 PCIe x16, 1 Mini PCIe, 1 M.2 M key • Rich I/O: 4 Intel GbE, 4 COM, 4 USB 3.0, 5 USB 2.0

STANDARD RECOVERY DIODES Hockey Puk Version

Features ■ Wide current range ■ High voltage ratings up to 4500V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version ■ Case style DO-200AC (K-PUK) Typical Applications ■ Converters ■ Power supplies ■ Machine tool controls ■ High power drives ■ Medium traction app

Standard Recovery Diodes (Hockey PUK Version), 2100 A

FEATURES • Wide current range • High voltage ratings up to 4500 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style DO-200AC (K-PUK) • Lead (Pb)-free TYPICAL APPLICATIONS • Converters • Power supplies • Machine tool controls • High power drives •

Standard Recovery Diodes (Hockey PUK Version), 2100 A

FEATURES • Wide current range • High voltage ratings up to 4500 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style DO-200AC (K-PUK) • Lead (Pb)-free TYPICAL APPLICATIONS • Converters • Power supplies • Machine tool controls • High power drives •

Standard Recovery Diodes (Hockey PUK Version), 2100 A

FEATURES • Wide current range • High voltage ratings up to 4500 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style DO-200AC (K-PUK) • Lead (Pb)-free TYPICAL APPLICATIONS • Converters • Power supplies • Machine tool controls • High power drives •

Standard Recovery Diodes (Hockey PUK Version), 2100 A

FEATURES • Wide current range • High voltage ratings up to 4500 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style DO-200AC (K-PUK) • Lead (Pb)-free TYPICAL APPLICATIONS • Converters • Power supplies • Machine tool controls • High power drives •

Standard Recovery Diodes (Hockey PUK Version), 2100 A

FEATURES • Wide current range • High voltage ratings up to 4500 V • High surge current capabilities • Diffused junction • Hockey PUK version • Case style DO-200AC (K-PUK) • Lead (Pb)-free TYPICAL APPLICATIONS • Converters • Power supplies • Machine tool controls • High power drives •

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMIT

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD −30 dB ■ COMMON EMITTER

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD − 30 dB ■ GOLD METALLIZATION ■ COMM

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30dB ■ EFFICIENCY 40 ■ COMMON EMITTER ■

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION

RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS

DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposes. FEATURES SUMMARY ■ 470 - 860 MHz ■ 25 VOLTS ■ CLASS A PUSH PULL ■ DE

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1732 is a gold metallized RF power transistor designed for Class-A, UHF and band IV and V TV transmitter applications. It utilizes emitter ballasting for high reliability and ruggedness. FEATURES: • Common Emitter: Class-A, 25 V • PG = 8.5 dB at 14 W/860 MHz • Omnigold™

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

SILICON SCHOTTKY RECTIFIER DIE

Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mech

Standard Recovery Diodes (Hockey PUK Version), 2100 A

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

Standard Recovery Diodes (Hockey PUK Version), 2100 A

文件：173.16 Kbytes Page：8 Pages

SHV BULKHEAD JACK

文件：127.95 Kbytes Page：1 Pages

RECEPTACLE, BKHD, SHV, F

文件：55.31 Kbytes Page：1 Pages

RECEPTACLE, BULKHEAD, SHV, M

文件：59.08 Kbytes Page：1 Pages

RECEPTACLE, PANEL, SHV, F

文件：53.45 Kbytes Page：1 Pages

PLUG, SHV

文件：48.49 Kbytes Page：1 Pages

PLUG, SHV

文件：42.78 Kbytes Page：1 Pages

PLUG, SHV

文件：45.52 Kbytes Page：1 Pages

SHV PLUG

文件：70.93 Kbytes Page：1 Pages

PLUG, SHV

文件：46.21 Kbytes Page：1 Pages

PLUG, SHV, M (6KV)

文件：49.73 Kbytes Page：1 Pages

RECEPTACLE, PANEL, SHV, M

文件：48.38 Kbytes Page：1 Pages

ADPT M-M, BKHD, SHV

文件：45.83 Kbytes Page：1 Pages

SHV ANGLE ADAPTE3R (M-F)

文件：492.78 Kbytes Page：1 Pages

LED插件背光源

ADAPTER, SHV, TEE (M-F-M)

文件：68.42 Kbytes Page：1 Pages

ADAPTER, M-M, SHV

文件：34.65 Kbytes Page：1 Pages

Schottky chip

Red Enhanced Silicon Photodiode

文件：97.46 Kbytes Page：1 Pages

Red Enhanced Silicon Photodiode

文件：122.27 Kbytes Page：2 Pages

Red Enhanced Ultra Low Capacitance Silicon Photodiode

文件：96.84 Kbytes Page：1 Pages

Red Enhanced Ultra Low Capacitance Silicon Photodiode

文件：150.75 Kbytes Page：1 Pages

Red Enhanced Ultra Low Capacitance Silicon Photodiode

文件：192.77 Kbytes Page：2 Pages

UV Enhanced Silicon Photodiode

文件：97.28 Kbytes Page：1 Pages