RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMIT

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

HF SSB Applications RF&Microwave Transistors

The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. P\nOUT = 150 W PEP MIN. WITH 14 dB GAIN\nGOLD METALLIZATION\nOPTIMIZED FOR SSB\n50 V\n30 MHz\nCOMMON EMITTER\nIMD-30 dB;

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

文件：197.64 Kbytes Page：8 Pages

封装/外壳：M174 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 55V M174 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

文件：197.64 Kbytes Page：8 Pages

Multiplier IC for Displays

Description The CXA1726AM/AS is a multiplier IC which is used for dynamic convergence, dynamic focus and others in CRT display monitors and projectors. It is used in conjunction with an IC (CXA1470AM/AS) which generates waveforms for deflection compensation. Features • Analog multiplier 4c

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

Isolated Drive Transmitter

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