| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SC10120 | SILICON CARBIDE SCHOTTKY DIODE 文件：897.75 Kbytes Page：6 Pages | JINGHENG 晶恒 |   | |
SC10120 | SiC Schottky | PINGWEI | | |
碳化硅二极管 | JINGHENG 晶恒 | | ||
Silicon Carbide Schottky Diode 文件：726.59 Kbytes Page：5 Pages | JINGHENG 晶恒 | | ||
SiC肖特基二极管 | JINGDAO 晶导 | | ||
Silicon Carbide Schottky Diode 文件：726.59 Kbytes Page：5 Pages | JINGHENG 晶恒 | | ||
SILICON CARBIDE SCHOTTKY DIODE 文件：897.75 Kbytes Page：6 Pages | JINGHENG 晶恒 | | ||
SILICON CARBIDE SCHOTTKY DIODE 文件：897.75 Kbytes Page：6 Pages | JINGHENG 晶恒 | | ||
Silicon Carbide Schottky Diode 文件：726.59 Kbytes Page：5 Pages | JINGHENG 晶恒 | | ||
SILICON CARBIDE SCHOTTKY DIODE 文件：897.75 Kbytes Page：6 Pages | JINGHENG 晶恒 | | ||
Silicon Carbide Schottky Diode 文件：1.31682 Mbytes Page：6 Pages | JINGHENG 晶恒 | | ||
Silicon Carbide Schottky Diode 文件：741.81 Kbytes Page：5 Pages | JINGHENG 晶恒 | | ||
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo | MACOM | | ||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | | ||
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a | ERICSSON 爱立信 | |
SC10120产品属性
- 类型
描述
- IF(A)：
10
- IFSM(A)：
110
- VF@IF_Max.(V)：
1.7
- VF@IF_Max.(A)：
10
- IR@VR_Max.(µA)：
50
- IR@VR_Max.(V)：
1200
- Capacitance(pf)：
883
- Trr(ns)：
0
- TJmax(°C)：
175
- Package：
TO-220AC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCAL |
25+ |
BGA |
2659 |
原装正品!公司现货!欢迎来电洽谈! |
|||
FREESCALE/飞思卡尔 |
2450+ |
BGA |
6540 |
只做原装正品现货或订货假一赔十! |
|||
FREESCALE |
25+ |
BGA |
18000 |
原装正品,全新来谈 |
|||
FSL |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
26+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FRESSCA |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
BEINDART/比英达特 |
22+ |
DIP |
20000 |
公司只有原装 品质保障 |
|||
KEMET |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
Freescale(飞思卡尔) |
2022+ |
60000 |
原厂原装,假一罚十 |
||||
FREESCALE |
20+ |
QFP44 |
500 |
样品可出,优势库存欢迎实单 |
SC10120规格书下载地址
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2013-1-12
DdatasheetPDF页码索引
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