位置:首页 > IC中文资料第5437页 > SBP13003D

型号 功能描述 生产厂家 企业 LOGO 操作
SBP13003D

High Voltage Fast -Switching NPN Power Transistor

General Description This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ Built-in free wheeling diode

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

SBP13003D

High Voltage Fast -Switching NPN Power Transistor

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

SBP13003D产品属性

  • 类型

    描述

  • 型号

    SBP13003D

  • 制造商

    WINSEMI

  • 制造商全称

    WINSEMI

  • 功能描述

    High Voltage Fast -Switching NPN Power Transistor

更新时间:2026-8-2 14:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MINI
24+
SMD
1680
MINI专营品牌进口原装现货假一赔十
TE CONNECTIVITY美国泰科
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
MINI-CIRCUITS
24+
con
10000
查现货到京北通宇商城
MINI
24+
25
TE/泰科
2608+
/
226570
一级代理,原装现货
TDK/东电化
23+
DIP-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
MINI
三年内
1983
只做原装正品
Mini-Circuits
24+
SMA
8500
Mini-Circuits/ADI国外工厂订货渠道
TDK
DIP-3
35560
一级代理 原装正品假一罚十价格优势长期供货
Mini-Circuits
24+
1000
优势货源原装正品

SBP13003D数据表相关新闻