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SBP13003D

High Voltage Fast -Switching NPN Power Transistor

General Description This Device is designed for high Voltage ,High speed switching Characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA ■ Built-in free wheeling diode

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

SBP13003D

High Voltage Fast -Switching NPN Power Transistor

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

SBP13003D产品属性

  • 类型

    描述

  • 型号

    SBP13003D

  • 制造商

    WINSEMI

  • 制造商全称

    WINSEMI

  • 功能描述

    High Voltage Fast -Switching NPN Power Transistor

更新时间:2026-5-15 11:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEMIWELL
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
SEMIWELL/西门威
26+
TO-220
43600
全新原装现货,假一赔十
WINSEMI
23+
TO-220
8650
受权代理!全新原装现货特价热卖!
SEMIWELL
25+
TO-220
12000
原装正品真实现货杜绝虚假
SEMWILL
23+
TO-220
50000
全新原装正品现货,支持订货
SEMIWELL
25+
TO-220
60000
代理原装现货,价格优势。
HUAJING
23+
TO-TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
JINGDAO/晶导微
23+
SOD-123FL
69820
终端可以免费供样,支持BOM配单!
SEMWILL
25+23+
TO-220
22475
绝对原装正品全新进口深圳现货
semiWell
05+
原厂原装
789
自己公司全新库存绝对有货

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