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型号 功能描述 生产厂家 企业 LOGO 操作
SB180-E

Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A

Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A Feature & Dimensions Flammability Classification 94V-0 * Low power loss,high efficiency * For use in low voltage highfrequency inverters, free wheeling,and polarity protection applications * Guardingfor

LRC

乐山无线电

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 80V CURRENT: 1.0A

VOLTAGE: 80V CURRENT: 1.0A FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension Halogen Free

GULFSEMI

海湾电子

SCHOTTKY BARRIER RECTIFIER

VOLTAGE: 80V CURRENT: 1.0A\nFEATURE\n   High current capability, Low forward voltage drop\n   Low power loss, high efficiency\n   High surge capability\n   High temperature soldering guaranteed\n   250°C /10sec/0.375\" lead length at 5 lbs tension\n   Halogen Free

Gulf

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179

MOTOROLA

摩托罗拉

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

NTE

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

SB180-E产品属性

  • 类型

    描述

  • 型号

    SB180-E

  • 制造商

    LRC

  • 制造商全称

    Leshan Radio Company

  • 功能描述

    Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A

更新时间:2026-5-20 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
25+
DO-41
29182
VISHAY/威世全新特价SB180-E3/73即刻询购立享优惠#长期有货
LRC
22+
DO-41
4636
原装现货
VISHAY/威世
25+
DO-41
90000
全新原装现货
VISHAY/威世
23+
DO-41
50000
全新原装正品现货,支持订货

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