Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI

Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage – 20 to 60 V Forward Current – 1 A Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage high frequency inverters, free wheeling, and polarity

Schottky Barrier Rectifier

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Schottky Barrier Rectifier

FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI

封装/外壳：DO-204AL，DO-41，轴向 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 1A DO204AL 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-204AL，DO-41，轴向 包装：带盒（TB） 描述：DIODE SCHOTTKY 60V 1A DO204AL 分立半导体产品 二极管 - 整流器 - 单

Leaded Schottky Barrier Rectifiers

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Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

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