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S1035

T1/E1/CEPT/ISDN-PRI TRANSFORMER

文件:56.86 Kbytes Page:1 Pages

BOTHHAND

背照式 应用CSP结构

S10355-01是一款背照式光电二极管,为了减小器件边角的盲点而采用CSP结构。CSP结构允许以平铺的格式应用多个器件。 \n-允许以平铺的格式安排多个器件\n-信号读出终端采用图案电极\n-可方便耦合进闪烁体;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

背照式 应用CSP结构

S10356-01是一款背照式光电二极管,为了减小器件边角的盲点而采用CSP结构。CSP结构允许以平铺的格式应用多个器件。 \n-允许以平铺的格式安排多个器件\n-信号读出终端采用图案电极\n-可方便耦合进闪烁体;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

Si photodiodes

文件:152.46 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Electrical Specifications

文件:1.2956 Mbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Electrical Specifications

文件:1.2956 Mbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS

Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Ep

MOTOROLA

摩托罗拉

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 35 Watts Peak Minimum Gain = 10 dB • 100 Tested for Loa

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(10A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara

MOSPEC

统懋

S1035产品属性

  • 类型

    描述

  • 象元数:

    1

  • 封装:

    CSP

  • 制冷:

    非制冷

  • 反偏电压(最大):

    10V

  • 光谱响应范围:

    400 to 1100 nm

  • 峰值波长:

    960 nm

  • 灵敏度:

    0.6 A/W

  • 暗电流:

    1000 pA

  • 上升时间(典型值):

    15 μs

  • 结电容:

    500 pF

  • 测试条件:

    Ta=25 ℃,除非特别说明均为典型值。灵敏度:λ=960nm,暗电流: VR=10m V,结电容: VR=0V,f=10kHz

更新时间:2026-5-23 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAMAMATSU
2447
CSP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISC/固电
23+
TO-3P
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
滨松
08+/QX
16
只做原装,现货库存

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