| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RU40120S | N-Channel Advanced Power MOSFET 文件：333.94 Kbytes Page：8 Pages | RUICHIPSShenzhen City Ruichips Semiconductor Co., Ltd 锐骏半导体深圳锐骏半导体股份有限公司 |  |   |
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED WOLFSPEED, INC. |  | | |
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED WOLFSPEED, INC. | | | |
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CreeCree, Inc 科锐 |  | | |
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CreeCree, Inc 科锐 | | | |
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | CreeCree, Inc 科锐 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
锐俊 |
24+ |
NA/ |
22800 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
锐俊 |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
锐骏品牌 |
1948+ |
TO-263 |
18562 |
只做原装正品现货!或订货假一赔十! |
|||
RUICHIPS |
24+ |
TO-263 |
60000 |
原装现货 |
|||
锐俊 |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RUICHIP |
17+ |
TO-263 |
60000 |
保证进口原装可开17%增值税发票 |
|||
RUICHIPS |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
RUICHIPS |
TO-220 |
64540 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RUICHIS |
24+ |
DFN5X6 |
38885 |
原装正品现货库存假一赔十欢迎询价 |
|||
RU |
23+ |
DFN5060 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
RU40120S芯片相关品牌
RU40120S规格书下载地址
RU40120S参数引脚图相关
- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- RU4BZ
- RU4BGF
- RU4AZ
- RU4AMZ
- RU4AM
- RU4AJG
- RU4AGF
- RU4953H
- RU42S-M
- RU42S-C
- RU42S
- RU40S4H
- RU40P4H
- RU40P3C
- RU4099R
- RU4099Q
- RU4095L
- RU4090L
- RU4089R
- RU4068L
- RU4030M2
- RU40280R
- RU40231R
- RU40231Q2
- RU40220R
- RU40191S
- RU40190S
- RU40190Q2
- RU40180M
- RU40150S
- RU40150R
- RU40130R
- RU40121R
- RU40121M
- RU40120R
- RU40120M
- RU4
- RU3Z
- RU3YZ
- RU3YXZ
- RU3YX_V01
- RU3YX
- RU3Y
- RU3MG
- RU3M
- RU3JGF
- RU3JG
- RU3CZ
- RU3C
- RU3BZ
- RU3B
- RU3AMS
- RU3AM_05
- RU3AM
- RU3710S
- RU3710R
- RU3582S
- RU3582R
- RU3568R
- RU3568L
- RU3560L
- RU3520H
- RU3415C
- RU3401C
- RU3225
RU40120S数据表相关新闻
RU40191S
RU40191S 40V 190AN沟道功率MOSFET RU40191S，漏源电压VDSS为40V，栅源电压VGSS为±20V，TC=25℃ 时漏极连续电流ID为190A（VGS=10V），漏源导通电阻RDS(ON)典型值为1.8mΩ（@VGS=10V，IDS=75A）。
2022-11-23RU40120M
RU40120M N沟道 40V 120A PDFN5060 场效应管 RU40120M N沟道 漏源电压(Vdss)：40V 连续漏极电流(Id)：120A 功率(Pd)：96W 导通电阻(RDS(on)@Vgs,Id)：4.5mΩ@10V,60A 阈值电压(Vgs(th)@Id)：4V@250uA N 沟道，40V，120A，2.7mΩ@10V RU40120M 封装:PDFN5060 N沟道高级功率MOS
2022-11-23RU3560L
RU3560L，场效应管(MOSFET)
2022-6-12RU40C40L4
RU40C40L4，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-20RU40280R
RU40280R，全新原装当天发货或门市自取0755-82732291.
2019-12-1RU40120R
RU40120R ，全新原装当天发货或门市自取0755-82732291.
2019-12-1
DdatasheetPDF页码索引
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