位置:首页 > IC中文资料 > RU40120M-A
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED | |||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED | |||
120 W, RF Power GaN HEMT 文件:1.21044 Mbytes Page:13 Pages | Cree 科锐 | |||
120 W, RF Power GaN HEMT 文件:1.21044 Mbytes Page:13 Pages | Cree 科锐 | |||
120 W, RF Power GaN HEMT 文件:1.21044 Mbytes Page:13 Pages | Cree 科锐 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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CREE |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
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CREE |
19+ |
SMD |
2 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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FREESCALE |
24+ |
TO-59 |
100 |
价格优势 |
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Cree/Wolfspeed |
22+ |
9000 |
原厂渠道,现货配单 |
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CREE |
24+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
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CREE(科锐) |
24+ |
N/A |
37048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
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Cree |
25+23+ |
BGA |
19488 |
绝对原装正品全新进口深圳现货 |
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CREE(科锐) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CREE/科锐 |
15+ |
NA |
200 |
受控型号特价订货只做全新进口原装-军工器 |
|||
CREE |
24+ |
N/A |
11000 |
原装正品 有挂有货 假一赔十 |
RU40120M-A芯片相关品牌
RU40120M-A规格书下载地址
RU40120M-A参数引脚图相关
- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- RU4BZ
- RU4BGF
- RU4AZ
- RU4AMZ
- RU4AM
- RU4AJG
- RU4AGF
- RU4953H
- RU42S-M
- RU42S-C
- RU42S
- RU40S4H
- RU40P4H
- RU40P3C
- RU4099R
- RU4099Q
- RU4095L
- RU4090L
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- RU4068L
- RU4022H
- RU40220R
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- RU40190R
- RU40190Q2
- RU40190
- RU40180M
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- RU3YXV1
- RU3YX-MLF-C2
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- RU3Y
- RU3V1
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- RU3MV1
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- RU3710S
- RU3710R
- RU3582S
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- RU3568R
- RU3568L
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- RU3520H
- RU3415C
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- RU3225
RU40120M-A数据表相关新闻
RU40191S
RU40191S 40V 190AN沟道功率MOSFET RU40191S,漏源电压VDSS为40V,栅源电压VGSS为±20V,TC=25℃ 时漏极连续电流ID为190A(VGS=10V),漏源导通电阻RDS(ON)典型值为1.8mΩ(@VGS=10V,IDS=75A)。
2022-11-23RU40120M
RU40120M N沟道 40V 120A PDFN5060 场效应管 RU40120M N沟道 漏源电压(Vdss):40V 连续漏极电流(Id):120A 功率(Pd):96W 导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,60A 阈值电压(Vgs(th)@Id):4V@250uA N 沟道,40V,120A,2.7mΩ@10V RU40120M 封装:PDFN5060 N沟道高级功率MOS
2022-11-23RU3560L
RU3560L,场效应管(MOSFET)
2022-6-12RU3415BC
RU3415BC,SOT23-3,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.
2021-2-17RU40280R
RU40280R,全新原装当天发货或门市自取0755-82732291.
2019-12-1RU40120R
RU40120R ,全新原装当天发货或门市自取0755-82732291.
2019-12-1
DdatasheetPDF页码索引
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