SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position: Any * Low leakage current * Weight: 4.0 grams

VOLTAGE 50V ~ 1000V 8.0AMP Single Phase Bridge Rectifiers

FEATURES * Ideal for printed circuit board * Low forward voltage * Polarity: marked on body * Mounting position: Any * Low leakage current * Weight: 4.0 grams

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

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Bridge Rectifiers

SINGLE-PHASE SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes)

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SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 600 to 1000 Volts CURRENT 8.0 Amperes

FEATURES * Low leakage * Low forward voltage * Mounting position: Any * Ideal for printed circuit boards * High forward surge current capability

Bridge Rectifiers

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)