NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage

NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

Features • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. • Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz • High Transition Frequency fT = 20 GHz typ. • High Collector to Emitter Voltage

Small Signal Bip-TRSs for High Frequency Amplifier

NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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