NPNSiliconGermaniumTransistorHighFrequencyMediumPowerAmplifier

Features •Idealfor2GHzBandapplications.e.g2.4GHzWLAN,Digitalcordlessphone. •LowDistortionandExcellentLinearity IP3atoutput=+30dBmtyp.,P1dBatoutput=+19dBmtyp.,f=1.8GHz •HighTransitionFrequency fT=20GHztyp. •HighCollectortoEmitterVoltage

USPowerSupplyCordwithIECConnectorC13,V-Lock,straight

Description -PowerCord,ProtectionclassI,Pintemperature70°C, -withV-Lockinterlockingsystem

1.0Watt-28Volts,ClassCMicrowave2000MHz

GENERALDESCRIPTION The2001isaCOMMONBASEtransistorcapableofproviding1WattsClassC,RFoutputpowerat2000MHz.GoldMetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealedpa

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingDiffusedCollectortechnologyformorestableoperationVsbasedrivecircuitvariationsresultinginverylowworstcasedissipation. ■NEWSERIES,ENHANCEDPERFORMANCE ■FULLYINSULATEDPACKAGE(U.L.COMPLIANT)FOREASYMOUNTING ■HIGHVOLTAGECAP

HighVoltageHighCurrentDarlingtonArrays

HIGH-VOLTAGE,HIGH-CURRENTDARLINGTONARRAYS Ideallysuitedforinterfacingbetweenlow-levellogiccircuitryandmultipleperipheralpowerloads,theSeriesULN20xxA/Lhigh-voltage,high-currentDarlingtonarraysfeaturecontinuousloadcurrentratingsto500mAforeachofthesevendrivers.At

7½-DigitHighPerformanceMultimeter8½-DigitHighPerformanceMultimeter

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