Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

Silicon N-Channel MOS FET

Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4)

Power MOSFETs-MOSFETs for high frequency amplifier

封装/外壳：TO-243AA 包装：卷带（TR） 描述：MOSFET N-CH 16V 3.2A UPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个

Silicon N-Channel MOS FET

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Silicon N-Channel MOS FET

Photoelectric Sensors

BFB M18M-001-P-S4 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 Principle of operation Photoelectric sensor Series 18M Style Cylinder, straight optics

Flyback Transformer

文件：149.64 Kbytes Page：1 Pages

SURFACE-MOUNT BROADBAND BALUN

文件：784.97 Kbytes Page：9 Pages

HIGH POWER SURFACE-MOUNT BALUN

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Flow Sensors

文件：95.34 Kbytes Page：2 Pages